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Temperature dependence of laser-induced micro/nanostructures for femtosecond laser irradiation of silicon

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Abstract

The temperature dependence (from 25°C to 350°C) of laser-induced micro/nanostructures for multiple linearly polarized femtosecond laser pulse (pulse duration τ=35fs, wavelength λ=800nm) irradiation of silicon in air is studied experimentally. Distinct micro/nanostructures are fabricated at elevated temperature. Low spatial frequency, laser-induced periodic ripple structures (LSFL), which are perpendicular to the polarization of the laser beam, are formed at all temperatures. Micrometer-size grooves, which are oriented perpendicular to the LSFL ripples, have been observed in the central part of the irradiated area above 150°C. The threshold to fabricate the LSFL ripples goes from 1.65 to 2kJ/m2 while the temperature of the substrate increases from 25°C to 350°C. The possible mechanism of the temperature dependence of the micro/nanostructure generation is also discussed. These results demonstrate that temperature is an important parameter to be tuned to tailor the micro/nanostructure fabrication.

© 2014 Optical Society of America

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