Abstract
The refractive indices of gold films deposited on (111) silicon wafers are measured by a polychromatic ellipsometer at various annealing temperatures below 300°C. The reflectivity increases slightly during the initial 260°C annealing stage and then decreases drastically by 40% near 2.06 eV as the annealing temperature rises to 293.5°C. Etch pits are found on the surface as the temperature rises further.
© 1988 Optical Society of America
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