Abstract

GaAs PIN traveling-wave modulators with terminating resistors of various resistances operated at 1.3 μm have been fabricated from material grown by organometallic vapor phase epitaxy (OMVPE) on n⁺ (100) GaAs substrates. It was found that modulators with positive reflection coefficients at the load exhibted initial roll-off in the frequency response. However, modulators with negative reflection coefficients at the load exhibited some peaking behavior at low frequencies at the expense of lower detected microwave powers. Based on this observation, a compromised PIN traveling-wave modulator was designed and measured to have a 3-dB bandwidth of 9.6 GHz.

© 1987 Optical Society of America

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