Abstract
A comparison of GaAs/n+GaAs, GaAs/GaAsP, and GaAs/AlGaAs waveguide structures is presented. Their fabrication processes and their transmission properties at 10.6-μm wavelength are described. The loss due to the free carrier absorption of the substrate is analyzed. Experimentally, an attenuation rate of 2 dB/cm in a single mode (∼7 μm) GaAs/GaAsp waveguide with a maximum dimension of the order of 7 cm has been achieved.
© 1975 Optical Society of America
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